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| HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D April 1995 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-218AC COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Features * 20A, 400V and 500V * VCE(ON) 2.5V Max. * TFALL 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance * Anti-Parallel Diode Terminal Diagram Applications * Power Supplies * Motor Drives * Protective Circuits G N-CHANNEL ENHANCEMENT MODE C Description The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits. E PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC BRAND G20N40C1D G20N40E1D G20N50C1D G20N50E1D NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1D HGTH20N40E1D 400 400 20 20 35 35 20 100 0.8 -55 to +150 HGTH20N50C1D HGTH20N50E1D 500 500 20 20 35 35 20 100 0.8 -55 to +150 UNITS V V V A A A A W W/oC oC Absolute Maximum Ratings Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25 at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2271.4 3-76 Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTH20N40C1D, HGTH20N40E1D PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0 VGE = VCE, IC = 1mA VCE = 400V, TC = +25oC VCE = 500V, TC = +25oC VCE = 400V, TC = +125oC VCE = 500V, TC = +125oC Gate-Emitter Leakage Current Collector-Emitter On Voltage IGES VCE(ON) VGE = 20V, VCE = 0 IC = 20A, VGE = 10V IC = 35A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 40E1D, 50E1D VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI 680 (Typ) 400 (Typ) WOFF IC = 20A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 1810 (Typ) 1070 (Typ) RJC VEC tRR IEC = 20A IEC = 20A, dIEC/dt = 100A/s 1.25 2 100 1.25 2 100 J J oC/W HGTH20N50C1D, HGTH20N50E1D MIN 500 2.0 MAX 4.5 250 1000 100 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 UNITS V V A A A A nA V V V nC ns ns ns MIN 400 2.0 - MAX 4.5 250 1000 100 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 IC = 10A, VCE = 10V IC = 10A, VCE = 10V IC = 20A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 1000 680 (Typ) 400 (Typ) 1000 ns 40C1D, 50C1D 500 500 ns Turn-Off Energy Loss per Cycle (Off Switching Dissipation = WOFF x Frequency) 40E1D, 50E1D 40C1D, 50C1D Thermal Resistance Junction-to-Case Diode Forward Voltage Diode Reverse Recovery Time V ns 3-77 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves 40 VGE = 10V, RGEN = RGS = 50 RATED POWER DISSIPATION (%) 35 ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0 -75 100 80 60 40 20 -50 -25 0 +25 +50 +75 +100 +125 +150 +175 0 +25 +50 +75 +100 +125 (oC) +150 TJ , JUNCTION TEMPERATURE (oC) TC , CASE TEMPERATURE FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50, VGE = 0V ARE THE MIN. ALLOWABLE VALUES NORMALIZED GATE THRESHOLD VOLTAGE (V) VGE = VCE, IC = 1mA FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE 35 VCE = 10V, PULSE TEST PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.2 1.1 1.0 0.9 0.8 0.7 ICE, COLLECTOR CURRENT (A) 1.3 30 25 20 15 10 5 +25oC +125oC -40oC -50 0 +50 +100 +150 TJ, JUNCTION TEMPERATURE (oC) 0 2.5 5.0 7.5 VGE, GATE-TO-EMITTER VOLTAGE (V) 10 FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS 35 VGE = 20V ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 5 VGE = 10V VGE = 8V VGE = 7V VGE = 6V VGE = 5V VGE = 4V TC = +25oC ICE, COLLECTOR CURRENT (A) 35 30 25 20 15 10 5 0 1 2 3 4 5 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 10V, PULSE TEST PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX +25oC 1 2 3 VCE(ON), COLLECTOR-TO-EMITTER ON VOLTAGE (V) 4 FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT 3-78 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves (Continued) VCE(ON), COLLECTOR-EMITTER VOLTAGE (V) 2700 f = 0.1MHz 2250 C, CAPACITANCE (pF) 3.00 2.75 IC = 20A, VGE = 10V 1800 2.50 IC = 20A, VGE = 15V 2.25 1350 CISS 900 COSS 450 CRSS 0 10 20 30 40 50 2.00 IC = 10A, VGE = 10V 1.75 IC = 10A, VGE = 15V +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) 1.50 +25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE 400 IC = 20A, VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 tD(OFF)I , TURN OFF DELAY TIME (ns) 300 FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE WOFF = IC * VCEdt VGE IC VCE 200 100 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. TYPICAL TURN-OFF DELAY TIME 800 700 600 tFI , FALL TIME (ns) 500 400 40C1D/50C1D 300 200 100 0 +25 IC = 10A, VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 40E1D/50E1D FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 700 600 tFI , FALL TIME (ns) 500 400 40C1D/50C1D 300 200 100 0 +25 40E1D/50E1D IC = 20A, VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 +50 +75 +100 +125 +150 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 11. TYPICAL FALL TIME (IC = 10A) FIGURE 12. TYPICAL FALL TIME (IC = 20A) 3-79 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D Typical Performance Curves (Continued) 900 800 700 20A, 40E1D/50E1D 600 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) 10A, 40E1D/50E1D 20A, 40C1D/50C1D VGE, GATE-EMITTER VOLTAGE (V) 20 VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1000 WOFF , TURN-OFF ENERGY LOSS (J) 500 VCC = BVCES 375 GATE EMITTER VOLTAGE 10 8 6 250 VCC = 0.25 BVCES RL = 25 IG(REF) = 0.76mA VGE = 10V COLLECTOR-EMITTER VOLTAGE 0 20 0 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 4 125 2 10A, 40C1D/50C1D NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off is not accurately represented by this normalization. FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) TYPICAL REVERSE RECOVERY TIME tRR , REVERSE RECOVERY TIME (ns) FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 100 IEC , EMITTER COLLECTOR CURRENT (A) 60 50 40 30 20 10 dIEC/dt 100A/s VR = 30V, TJ = +25oC 10 TJ = +150oC TJ = +100oC 1.0 TJ = +25oC TJ = -50oC 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 VEC , EMITTER-COLLECTOR VOLTAGE (V) IEC , EMITTER-COLLECTOR CURRENT (A) FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR VOLTAGE vs CURRENT FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME Test Circuit RL = 4 L = 25H VCC VCE(CLP) = 300V 1/RG = 1/RGEN + 1/RGE RGEN = 50 100V 20V 0V RGE = 50 FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 3-80 HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-81 |
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